Optical properties and band structure of highly doped gallium nitride

Rüdiger Goldhahn; Karsten Lange; Martin Feneberg

doi:10.1117/12.2079379

13 March 2015 Optical properties and band structure of highly doped gallium nitride

Rüdiger Goldhahn, Karsten Lange, Martin Feneberg

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93630G (2015) https://doi.org/10.1117/12.2079379
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Spectroscopic ellipsometry is applied for determining the ordinary and extraordinary dielectric functions of wurtzite GaN for different free-electron concentrations. The analysis of the dielectric functions in the infrared spectral range yields the frequencies of the coupled longitudinal plasmonphonon modes. From the related plasma frequencies the anisotropy of the effective electron mass is determined. The data in the ultraviolet range indicate unambiguously that the L-valley of the conduction band for undoped material is located at least ≈ 2 eV above the conduction band minimum at the Γ-point. In contrast to the behavior at the Γ-point, the band structure at the L-valley does not undergo a renormalization with increasing free-electron density.

Citation Download Citation

Rüdiger Goldhahn, Karsten Lange, and Martin Feneberg "Optical properties and band structure of highly doped gallium nitride", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630G (13 March 2015); https://doi.org/10.1117/12.2079379

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