400mW output power at 445 nm with narrowband emission from an external cavity diode laser system

Norman Ruhnke; André Müller; Bernd Eppich; Martin Maiwald; Bernd Sumpf; Götz Erbert; Günther Tränkle

doi:10.1117/12.2076926

20 March 2015 400mW output power at 445 nm with narrowband emission from an external cavity diode laser system

Norman Ruhnke, André Müller, Bernd Eppich, Martin Maiwald, Bernd Sumpf, Götz Erbert, Günther Tränkle

Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93820P (2015) https://doi.org/10.1117/12.2076926
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Recently, high-power broad-area laser diodes based on GaN with output powers beyond 1 W have become available. However, their broad spectral emission limits their applicability. Due to a lack of internal grating technology for GaN devices, narrowband emission with several hundreds of milliwatts in the blue-green spectral range has not been achieved with laser diodes thus far. In this work, a high-power external cavity diode laser (ECDL) system at 445 nm is presented. The system is based on a commercially available broad-area GaN laser diode and a surface diffraction grating in Littrow configuration for optical feedback. Using this configuration an output power of 400 mW with a reduced spectral emission bandwidth of 20 pm (FWHM) with a side-mode suppression ratio larger than 40 dB is obtained. With the above presented optical output power and narrowband laser emission at 445 nm, the ECDL is well suited as a pump light source for nonlinear frequency conversion into the deep ultraviolet spectral range.

Citation Download Citation

Norman Ruhnke, André Müller, Bernd Eppich, Martin Maiwald, Bernd Sumpf, Götz Erbert, and Günther Tränkle "400mW output power at 445 nm with narrowband emission from an external cavity diode laser system", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820P (20 March 2015); https://doi.org/10.1117/12.2076926

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