Sub-100ps single photoelectron time resolution of a strip silicon photomultiplier for time-resolved optical spectroscopy

Shenyuan Wang; Rongdan Liu; Kun Liang; Ru Yang; Dejun Han

doi:10.1117/12.2199508

15 October 2015 Sub-100ps single photoelectron time resolution of a strip silicon photomultiplier for time-resolved optical spectroscopy

Shenyuan Wang, Rongdan Liu, Kun Liang, Ru Yang, Dejun Han

Author Affiliations +

Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96741I (2015) https://doi.org/10.1117/12.2199508
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China

Abstract

SiPM with epitaxial quenching resistors developed at NDL (Novel Device Laboratory, Beijing) could alleviate the conflict between large dynamic range and high photon detection efficiency (PDE). It can be used as low light level detector in various applications with excellent single photoelectron time resolution (SPTR) and photon counting capacity. SPTR is mainly determined by the intrinsic structure parameters of the SiPM. However, it is also limited to measurement setup, electronics readout and the ultra-small signal of single photoelectron level. In this work, we designed and fabricated a 1 mm × 1 mm strip SiPM array for possible applications in time-resolved optical spectroscopy. The SiPM array consists of sixteen 50 _μm × 1 mm strip SiPM elements. Each element contains five hundred 6.5 _μm × 6.5 _μm micro avalanche photodiode (APD) cells with 10_μm pitch. The strip SiPM demonstrated SPTR of 68 ps (FWHM), peak PDE of 17% around 450 nm and high photon number resolving and photon counting capability.

Citation Download Citation

Shenyuan Wang, Rongdan Liu, Kun Liang, Ru Yang, and Dejun Han "Sub-100ps single photoelectron time resolution of a strip silicon photomultiplier for time-resolved optical spectroscopy", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96741I (15 October 2015); https://doi.org/10.1117/12.2199508

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