Much attention has been paid to silicon photomultiplier (SiPM) for single photon resolution. The New Devices Laboratory, Beijing Normal University developed a SiPM with bulk integrated quenching resistors, which has simple, compact structure, can achieve high dynamic range. This paper presents a bulk resistor type SiPM with trenches isolation. The effects of the trench depth on quenching bulk resistors and breakdown voltage are studied by simulation. The bulk quenching resistors and breakdown voltage can be adjusted by the depth of the isolation trench when the wafer resistivity is high. The results are important for the design of the bulk resistors quenching SiPM.
In this report, we present Time-Correlated Photon Counting (TCPC) technique and its applications in time-correlated Raman spectroscopy. The main difference between TCPC and existing Time-Correlated Single Photon Counting (TCSPC) is that the TCPC employs a photon-number-resolving photodetector (SiPM, silicon photomultiplier) and measures exact photon number rather than counting single photon by reducing pulse light intensity, thus high measurement speed and efficiency can be expected. A home-made Raman spectrometer has demonstrated an Instrument Response Function (IRF) ~100ps (FWHM) based on TCPC with a strip SiPM (1mm×0.05mm, containing 500 micro cells), fast and weak Raman signals was separated from slow and strong fluorescence background of bulk trinitrotoluene(TNT)sample. The original Raman spectrum of bulk TNT, measured by TCPC technique, is compared with the result obtained by a commercial Micro-Raman Spectrometer.
SiPM with epitaxial quenching resistors developed at NDL (Novel Device Laboratory, Beijing) could alleviate the conflict between large dynamic range and high photon detection efficiency (PDE). It can be used as low light level detector in various applications with excellent single photoelectron time resolution (SPTR) and photon counting capacity. SPTR is mainly determined by the intrinsic structure parameters of the SiPM. However, it is also limited to measurement setup, electronics readout and the ultra-small signal of single photoelectron level. In this work, we designed and fabricated a 1 mm × 1 mm strip SiPM array for possible applications in time-resolved optical spectroscopy. The SiPM array consists of sixteen 50 μm × 1 mm strip SiPM elements. Each element contains five hundred 6.5 μm × 6.5 μm micro avalanche photodiode (APD) cells with 10μm pitch. The strip SiPM demonstrated SPTR of 68 ps (FWHM), peak PDE of 17% around 450 nm and high photon number resolving and photon counting capability.
A blue-violet enhanced BDJ photodetector which can simultaneously determine the centroid wavelength and the
radiant power of LEDs from 380 to780nm was investigated, and its application in the color measurement and the white
balancing of RGB white LEDs was demonstrated. This BDJ photodetector directly gave the chromatic coordinates of a
LED that was approximated as a monochromatic stimulus due to its narrow spectrum compared with the CIE colormatching
functions. Maximal simulated and experimental errors Δ'u'v' to the target white point of the white balanced
RGB LEDs was 0.0154 and 0.0214. The BDJ photodetector also performed to be sensitive to the spectrum variation
characterized by CCT, and was preferable as a sensor for monitoring the white point.
Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8μ+m reached 1260 and 8108. The input noise current calculated is 5.46*10^-16 A/Hz^1/2. For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174μ+w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3μ+w at the wavelength of 1.55μ+m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.
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