An evaluation of edge roll off on 28nm FDSOI (fully depleted silicon on insulator) product

M. Gatefait; B. Le-Gratiet; C. Prentice; T. Hasan

doi:10.1117/12.2218859

24 March 2016 An evaluation of edge roll off on 28nm FDSOI (fully depleted silicon on insulator) product

M. Gatefait, B. Le-Gratiet, C. Prentice, T. Hasan

Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 97782Y (2016) https://doi.org/10.1117/12.2218859
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

On product wafers, scanner focus is better controlled at the wafer center than at the wafer edge. This is due, in a large part, to edge roll off effects [1]. This paper quantifies the impact of edge roll off on scanner levelling non-correctable errors and correlates this to on-product effects. The main contributors and mitigation methods are also discussed for a NXT:1950 scanner.

Citation Download Citation

M. Gatefait, B. Le-Gratiet, C. Prentice, and T. Hasan "An evaluation of edge roll off on 28nm FDSOI (fully depleted silicon on insulator) product", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782Y (24 March 2016); https://doi.org/10.1117/12.2218859

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