Presentation
21 March 2023 Ultra-compact low-loss GaN waveguides for potential large-scale Photonic Integrated Circuit (PICs) applications
Author Affiliations +
Abstract
We present the realization of low-absorptive GaN waveguide for cost-effective, ultra-compact visible light Photonic Integrated Circuit (PICs) applications. Within this framework, in order to achieve on chip fabrication of both active and passive parts on GaN platform, we realized the well-defined sensitivity of indium incorporation to InGaN layers (Quantum wells) to substrate misorientation during epitaxial growth of device structure with MOCVD. Fabrication of GaN waveguides on locally high misoriented areas (1 degree- 4 degree) coupled with neighboring laser diodes on flat areas (0.2 degree) allowed us to locally shift the absorption edge of InGaN quantum wells enabling efficient light transmission through the fabricated waveguides.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiran Saba, Anna Kafar, Dario Schiavon, Szymon Grzanka, and Piotr Perlin "Ultra-compact low-loss GaN waveguides for potential large-scale Photonic Integrated Circuit (PICs) applications", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648938
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KEYWORDS
Photonic integrated circuits

Waveguides

Gallium nitride

Quantum wells

Visible radiation

Absorption

Indium

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