9 April 2015 Comparison and analysis of capacitive humidity sensors with water vapor inlet holes of different depths
Kyo Sang Choi, Deok Su Kim, Hee June Yang, Min Soo Ryu, Ji Sung Chae, Sung Pil Chang
Author Affiliations +
Abstract
This paper describes the design, fabrication, and characterization of a capacitive humidity sensor with water vapor inlet holes of different depths. The humidity sensors were composed of a SiO2 insulation layer, a bottom electrode, a polyimide (PI) sensing layer, and a top electrode containing water vapor inlet holes. The sensors were 3.5  mm×3.5  mm with a 0.7-μm thick PI-based sensing layer. A humidity sensor with a partially etched PI layer in the water vapor inlet holes had the following characteristics: sensitivity 1500fF/%RH, hysteresis 0.37%, and a response time of 70 s.
© 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2015/$25.00 © 2015 SPIE
Kyo Sang Choi, Deok Su Kim, Hee June Yang, Min Soo Ryu, Ji Sung Chae, and Sung Pil Chang "Comparison and analysis of capacitive humidity sensors with water vapor inlet holes of different depths," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(2), 025001 (9 April 2015). https://doi.org/10.1117/1.JMM.14.2.025001
Published: 9 April 2015
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Sensors

Humidity

Electrodes

Dielectrics

Etching

Capacitance

Photoresist materials

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