Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices

Kaikai Xu; Zhengyuan Zhang; Zhengping Zhang

doi:10.1117/1.JNP.10.016002

27 January 2016 Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices

Kaikai Xu, Zhengyuan Zhang, Zhengping Zhang

Author Affiliations +

Journal of Nanophotonics, Vol. 10, Issue 1, 016002 (January 2016). https://doi.org/10.1117/1.JNP.10.016002

Abstract

A silicon p-channel metal oxide semiconductor field-effect transistor (Si-PMOSFET) that is fully compatible with the standard complementary metal oxide semiconductor process is investigated based on the phenomenon of optical radiation observed in the reverse-biased p–n junction in the Si-PMOSFET device. The device can be used either as a two-terminal silicon diode light-emitting device (Si-diode LED) or as a three-terminal silicon gate-controlled diode light-emitting device (Si gate-controlled diode LED). It is seen that the three-terminal operating mode could provide much higher power transfer efficiency than the two-terminal operating mode. A new solution based on the concept of a theoretical quantum efficiency model combined with calculated results is proposed for interpreting the evidence of light intensity reduction at high operating voltages. The Si-LED that can be easily integrated into CMOS fabrication process is an important step toward optical interconnects.

Citation Download Citation

Kaikai Xu, Zhengyuan Zhang, and Zhengping Zhang "Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices," Journal of Nanophotonics 10(1), 016002 (27 January 2016). https://doi.org/10.1117/1.JNP.10.016002

Published: 27 January 2016

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