Dr. Alexandre Pauchard Profile

Dr. Alexandre Pauchard

Head of R&D at BOBST

SPIE Involvement:

Author

Proceedings Article | 29 April 2009 Paper

Epitaxially-grown germanium/silicon avalanche photodiodes for near infrared light detection

Yimin Kang, Han-Din Liu, Mike Morse, Mario Paniccia, Moshe Zadka, Stas Litski, Gadi Sarid, Alexandre Pauchard, Ying-Hao Kuo, Hui-Wen Chen, Wissem Sfar Zaoui, John Bowers, Andreas Beling, Dion McIntosh, Xiaoguang Zheng, Joe Campbell

Proceedings Volume 7339, 733906 (2009) https://doi.org/10.1117/12.818917

KEYWORDS: Avalanche photodetectors, Silicon, Receivers, Germanium, Near infrared, Avalanche photodiodes, Absorption, Sensors, Reliability, Silicon photonics

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Proceedings Article | 24 February 2009 Paper

Advanced micromachining combining nanosecond lasers with water jet-guided laser technology

A. Pauchard, K. Lee, N. Vago, M. Pavius, S. Obi

Proceedings Volume 7201, 72010A (2009) https://doi.org/10.1117/12.814712

KEYWORDS: Laser applications, Semiconducting wafers, Silicon, Silicon carbide, Diodes, Laser marking, Semiconductor lasers, Laser cutting, Micromachining, Solar cells

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Proceedings Article | 11 May 2007 Paper

ASIC for high-speed-gating and free running operation of SPADs

Alexis Rochas, Christophe Guillaume-Gentil, Jean-Daniel Gautier, Alexandre Pauchard, Gregoire Ribordy, Hugo Zbinden, Yusuf Leblebici, Laurent Monat

Proceedings Volume 6583, 65830F (2007) https://doi.org/10.1117/12.722828

KEYWORDS: Avalanche photodetectors, Single photon, Quenching (fluorescence), Switches, Sensors, Quantum cryptography, Electronic circuits, Diodes, Signal detection, Quantum optics

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Proceedings Article | 3 November 2006 Paper

Ultra-compact CMOS single photon detector

A. Rochas, A. Pauchard, L. Monat, A. Matteo, P. Trinkler, R. Thew, R. Ribordy

Proceedings Volume 6372, 63720N (2006) https://doi.org/10.1117/12.692604

KEYWORDS: Sensors, Single photon detectors, Quenching (fluorescence), Diodes, Single photon, Silicon, Luminescence, Photodetectors, Switches, Visible radiation

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Proceedings Article | 30 August 2004 Paper

InGaAs-on-Si photodetectors for high-sensitivity detection

Martin Bitter, Z. Pan, Sigurgeir Kristjansson, Lee Boman, Rick Gold, Alexandre Pauchard

Proceedings Volume 5406, (2004) https://doi.org/10.1117/12.541660

KEYWORDS: Avalanche photodetectors, Silicon, Indium gallium arsenide, Interfaces, Ionization, Avalanche photodiodes, Semiconducting wafers, Quantum efficiency, Sensors, Receivers

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Proceedings Article | 29 August 2002 Paper

InGaAs-Si avalanche photodiodes fabricated by wafer bonding

Zhong Pan, Martin Bitter, Alexandre Pauchard, Steve Hummel, Tao Feng, Yimin Kang, Phil Mages, Paul Yu, Yu-Hwa Lo

Proceedings Volume 4905, (2002) https://doi.org/10.1117/12.481018

KEYWORDS: Avalanche photodetectors, Silicon, Indium gallium arsenide, Wafer bonding, Interfaces, Absorption, Avalanche photodiodes, Thermal effects, Crystals, Ionization

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Proceedings Article | 21 May 2002 Paper

Wafer-bonded InGaAs/silicon avalanche photodiodes

Alexandre Pauchard, Phil Mages, Yimin Kang, Martin Bitter, Z. Pan, D. Sengupta, Steve Hummel, Yu-Hwa Lo, Paul Yu

Proceedings Volume 4650, (2002) https://doi.org/10.1117/12.467674

KEYWORDS: Avalanche photodetectors, Silicon, Receivers, Avalanche photodiodes, Indium gallium arsenide, Ionization, Semiconducting wafers, Electrons, Absorption, Crystals

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Proceedings Article | 17 October 2001 Paper

Long-wavelength photonic integrated circuits and avalanche photodetectors

Yi-Jen Tsou, Sergey Zaytsev, Alexandre Pauchard, Steve Hummel, Yu-Hwa Lo

Proceedings Volume 4581, (2001) https://doi.org/10.1117/12.445074

KEYWORDS: Avalanche photodetectors, Photonic integrated circuits, Vertical cavity surface emitting lasers, Single mode fibers, Data communications, Semiconducting wafers, Laser applications, Receivers, Interfaces, Optical components

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Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve InGaAs/Si APDs with much greater potential than the traditional InGaAs/InP APDs. Preliminary results on their performance will be presented.

Proceedings Article | 15 October 2001 Paper

InP-based three-dimensional photonic integrated circuits

Diana Tsou, Sergey Zaytsev, Alexandre Pauchard, Steve Hummel, Yu-Hwa Lo

Proceedings Volume 4600, (2001) https://doi.org/10.1117/12.444674

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Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure. This additional beam routing flexibility allows significant size reduction and process simplification without sacrificing device performance. This innovative 3-D PIC technology platform can be easily extended to create surface-emitting lasers integrated with power monitoring detectors, micro-lenses, external modulators, amplifiers, and other passive and active components. Such added functionality can produce cost--effective solutions for the highest-end laser transmitters required for datacom and short range telecom networks, as well as fiber channels and other cost and performance sensitive applications. We present results for 1310 nm photonic IC surface-emitting laser transmitters operating at 2.5 Gbps without active thermal electric cooling.

Showing 5 of 9 publications

SPIE Conference Volume | 11 May 2007

Photon Counting Applications, Quantum Optics, and Quantum Cryptography

Conference Committee Involvement (3)

Advanced Photon Counting Techniques II

9 September 2007 | Boston, MA, United States

Photon Counting Applications

19 April 2007 | Prague, Czech Republic

Advanced Photon Counting Techniques

1 October 2006 | Boston, Massachusetts, United States

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