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Ananthi G. Govindasamy
at PSNA College of Engg & Tech
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Publications (1)
Proceedings Article | 13 September 2005 Paper
Two dimensional numerical modeling of short channel Si-SiO2 MOSFET
Madheswaran Muthusamy, Ananthi Govindasamy, Rajamani Vayanaperumal
Proceedings Volume 5925, 59250Z (2005) https://doi.org/10.1117/12.618351
KEYWORDS: Field effect transistors, Scattering, Numerical modeling, Instrument modeling, Surface roughness, Oxides, Interfaces, Semiconductors, Device simulation, Communication engineering
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