Dr. Bahram Nabet Profile

Dr. Bahram Nabet

at Drexel Univ

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Publications (7)

Proceedings Article | 14 May 2018 Presentation + Paper

Opto-plasmonic devices: controlling light with electrons

Bahram Nabet, Pouya Dianat, Zhihuan Wang, Kiana Montazeri

Proceedings Volume 10639, 106390H (2018) https://doi.org/10.1117/12.2303420

KEYWORDS: Plasmonics, Capacitance, Nanowires, Photodetectors, Electronics, Photonics, Optoelectronic devices, Silicon photonics

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Proceedings Article | 21 February 2006 Paper

Light scattering properties of kidney epithelial cells and nuclei

Elina Vitol, Timothy Kurzweg, Bahram Nabet

Proceedings Volume 6091, 609108 (2006) https://doi.org/10.1117/12.644863

KEYWORDS: Light scattering, Scattering, Tissue optics, Backscatter, Mie scattering, Kidney, Biopsy, Spectroscopy, Fourier transforms, Cancer

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Proceedings Article | 13 October 2005 Paper

Using white-light spectroscopy for size determination of tissue phantoms

Elina Vitol, Timothy Kurzweg, Bahram Nabet

Proceedings Volume 5969, 59691H (2005) https://doi.org/10.1117/12.629728

KEYWORDS: Light scattering, Scattering, Tissue optics, Mie scattering, Cancer, Biopsy, Spectroscopy, Refractive index, Particles, Esophagus

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Proceedings Article | 8 June 2004 Paper

Physical modeling of semiconductor heterodimensional devices for photodetector applications

Gregory Tait, Bahram Nabet

Proceedings Volume 5353, (2004) https://doi.org/10.1117/12.529285

KEYWORDS: Photodetectors, Quantum wells, Electrodes, Semiconductors, Indium gallium arsenide, Metals, Heterojunctions, Modulation, Interfaces, Field effect transistors

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Proceedings Article | 20 September 2002 Paper

Photodetectors based on heterostructures for optoelectronic applications

Bahram Nabet, Adriano Cola, Andrea Cataldo, Xiying Chen, Fabio Quaranta

Proceedings Volume 4919, (2002) https://doi.org/10.1117/12.465820

KEYWORDS: Doping, Photodetectors, Heterojunctions, Electrons, Gallium arsenide, Sensors, Capacitance, Absorption, Mirrors, Aluminum

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In this work we describe a family of optical devices based on heterojunction and heterodimensional structures and we investigate their static and dynamic properties. Such devices are good candidates, due to their high performance, for utilization as the sensing element for the realization of sensors in the fields of telecommunications, remote sensing, LIDAR and medical imaging. First, we present a Heterostructure Metal-Semiconductor-Metal (HMSM) photodetectors that employ a uniformly doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of the photogenerated electrons. In this first family of devices, two doping levels are compared showing the direct effect of the aiding field due to modulation doping. Subsequently, we analyze a novel Resonant-Cavity-Enhanced (RCE) HMSM photodetector in which a Distributed Bragg Reflector (DBR) is employed in order to reduce the thickness of the absorption layer thus achieving good responsivity and high speed as well as wavelength selectivity. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and on-wafer frequency domain measurements point out the better performance of this last family of detectors, as they can operate in tens of Giga-Hertz range with low dark current and high responsivity. Particularly, the I-V curves show a very low dark current (around 10 picoamps at operative biases); C-V measurements highlight the low geometrical capacitance values; the photocurrent spectrum shows a clear peak at 850 nm wavelength, while time response measurements give a 3 dB bandwidth of about 30 GHz. Small signal model based on frequency domain data is also extracted in order to facilitate future photoreceiver design. Furthermore, two-dimensional numerical simulations have been carried out in order to predict the electrical properties of these detectors. Combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes these devices especially suitable for the above-mentioned applications.

Proceedings Article | 24 May 2000 Paper

Increasing the optical coupling efficiency of planar photodetectors: electron beam writing of an integrated microlens array on top of an MSM device

Antonio Seabra, F. Araes, Murilo Romero, Luiz Neto, Bahram Nabet

Proceedings Volume 4089, (2000) https://doi.org/10.1117/12.386781

KEYWORDS: Microlens array, Photodetectors, Metals, Gallium arsenide, Semiconductors, Integrated optics, Microlens, Electron beams, Sensors, Lenses

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Proceedings Article | 9 July 1991 Paper

Analysis and analog implementation of directionally sensitive shunting inhibitory neural networks

Abdesselam Bouzerdoum, Bahram Nabet, Robert Pinter

Proceedings Volume 1473, (1991) https://doi.org/10.1117/12.45538

KEYWORDS: Neurons, Analog electronics, Neural networks, Transistors, Visual information processing, Field effect transistors, Sensors, Visual system, Visualization, Visual process modeling

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Showing 5 of 7 publications

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