In this paper we present the developments carried out at III-V lab in collaboration with CEA-Leti on the hybrid integration of III-V chips with ultra-low-loss silicon nitride circuits for optical detection and RF systems. Different types of hybrid circuits will be presented: 1- a narrow linewidth laser based on the combination of an InP R-SOA and a long Bragg grating on SiN, 2- a Kerr frequency comb based on a high-power InP DFB laser butt-coupled to a high-Q SiN micro-ring, 3- a long cavity mode-locked laser based on an R-SOA and a SiN circuit with a delay line and a Bragg grating.
In this work, self-mode-locking of 100 GHz mode-locked pulses from a single-section InP quantum-dash-based laser chip whilst employed in external cavity geometry at 1550nm is investigated. The chip is operated at a forward current marginally above its monolithic operation's lasing threshold. Ultrashort pulses with 1 ps pulse- width were obtained by compensating the chirp by a single mode fiber (SMF).
In this work, a comparison of self-mode-locking of a 100 GHz repetition-rate monolithic diode as a stand-alone laser source and whilst employed in an external cavity arrangement at 1550 nm is reported. We operated our chip at a forward current slightly above the monolithic chip's lasing threshold and compensated the chirp by a single mode fiber. Ultrashort pulses with 1 ps pulse-width were generated. Changes in the dispersion compensation parameters due to the changed cavity dispersion were analyzed.
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