The paper presents the amplifier for application in an active electronically scanned array (AESA). For design purposes both time- and frequency domain simulations were carried out. The developed amplifier achieved more than 9W of output power at a maximum efficiency of 57% for 9.5 GHz and small-signal gain |S21|>11dB over 9-10 GHz frequency range. Furthermore, the potential of Polish GaN HEMT technology based on domestic, semi-insulating, bulk GaN substrate fabricated by Ammono.
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