Atomic and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction was described by means of density functional theory. The interface was found to be narrow-gap semiconductor with indirect band gap. The redistribution of states near the Fermi level in hybrid structure and the impact of spin-orbit coupling are discussed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.