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Gang Chen
at Luoyang Optoelectro Technology Development Ctr
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Publications (3)
Proceedings Article | 16 August 2024 Paper
Optoelectronic properties analysis in InAs/GaSb type-II superlattices long-wave infrared detectors based on graded barrier structure
Peipei Song, Ruiting Hao, Gang Chen, Wen Wang, Meng Guo, Jiatong Liu, Jun Xu, Junbin Li, Yanhui Li, Jincheng Kong, Jun Zhao
Proceedings Volume 13231, 132311G (2024) https://doi.org/10.1117/12.3040004
KEYWORDS: Dark current, Sensors, Infrared detectors, Long wavelength infrared, Black bodies, Activation energy, Temperature metrology, Superlattices, Laser sintering, Gallium antimonide
Proceedings Article | 12 December 2018 Paper
Mesa InSb infrared focal plane detector by Be implantation
Peng Wei, Gang Chen, Kelin Zheng
Proceedings Volume 10846, 108462V (2018) https://doi.org/10.1117/12.2505600
KEYWORDS: Beryllium, Sensors, Annealing, Infrared detectors, Ion implantation, Infrared radiation, Infrared sensors, Semiconducting wafers, Staring arrays, Ions
Proceedings Article | 12 December 2018 Paper
Annealing effect on the photodiode properties of Be implanted InSb
Gang Chen, Peng Wei, Guansheng Yao, Yubo Wang, Yanqiu Lv
Proceedings Volume 10846, 108462H (2018) https://doi.org/10.1117/12.2505472
KEYWORDS: Annealing, Photodiodes, Beryllium, Diodes, Ions, Doping, Solar energy, Resistance, Ion implantation, Etching
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