Subsurface defects of optical components will reduce the coating quality, transmission characteristics, damage threshold and other characteristics of optical components, and seriously affect the service life of optical components. In order to quickly and non-destructively detect subsurface defects of optical components, this paper proposes a method for utilizing Through-Focus Scanning Optical Microscopy (TSOM) to detect subsurface defects of optical components. Based on the traditional scanning method of optical microscopy, a set of two-dimensional optical images is collected by scanning through the various focus positions (from above the focus to below the focus, within the focus and out of focus). These acquired images are stacked and arranged in the Z direction to generate TSOM images, and the target is located by obtaining the maximum grayscale value of the detected feature. This method can detect subsurface defects of optical glass with a size of 2μm and locate the depth of defects. Through experimental testing of package samples, it was found that defects of the same depth exhibit consistent grayscale variations. This characteristic enables the differentiation between defects located on the surface or subsurface of the 30nm thick structure.
The contamination control of silicon wafer surface is more and more strict. Many investigations have been done to inspect defects on silicon wafer. However, rare studies have been reported on defect component inspection, which is also critical to trace the source of defects and monitor manufacturing processes in time. In order to inspect the components of contaminated particles on silicon wafer, especially with a high-speed, in-line mode and negligible damage, a dual nanosecond pulse laser system with both wavelengths at 532 nm is designed, in which one laser pumps the particles away from the wafer surface with negligible damage, the other laser breaks down the particles in the air above the wafer surface to obtain the emission lines of the contaminated particles by a spectroscopy with intensified charge coupled device. The sensitivity of the dual pulse laser system is evaluated. The particle dynamic process after pump is analyzed. The results in this work provide a potential on-line method for the semiconductor industry to trace the sources of defects during the manufacture process.
Requirements of surface quality of silicon wafer are increasingly restrict. Many investigations have been done to inspect defects on silicon wafer. However, rare studies have been reported on defect components inspection which is also critical to trace to the source of defects and monitor the manufacture processes in time. In order to inspect the components of contaminated particles on silicon wafer, especially with a high speed and in line mode, dual nanosecond pulse laser system both wavelengths at 532nm is designed in which one laser pumps the particles away from wafer surface almost without damage, the other laser breakdowns the particles in air above the wafer surface to obtain the emission lines of the contaminated particles by a spectroscopy with CCD. The sensitivity of the dual pulse laser system is evaluated.
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