In the present study, we have investigated the surface functionalization of dodecanethiol on ZnO film surface grown at
three different oxygen partial pressure using pulsed laser deposition (PLD) technique. The thiol funcitonalized ZnO films
have been examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and
vibrating sample magnetometer (VSM) measurement. XRD pattern show slight decrease in intensity of diffraction peak
upon surface functionalization. The chemical bonding of ZnO with thiol has been confirmed by XPS measurement. The
presence of S 2p3/2 peak centered about 163 eV suggests that proton has dissociated fromed thiol and form chemical
bonding to the ZnO surface. PL measurements of thiol functionalized ZnO films show quenching of visible emission
intensity relative to the unfunctionalized ZnO films. The quenching of visible emission suggests that thiol passivates
surface defects via Zn-S bonding. Surface functionalization of ZnO films with thiol induces robust room temperature
ferromagnetism as evidenced from VSM measurements.
In the present study, we have investigated the effect of 50 MeV Ag-ions irradiation on structural, optical and magnetic
properties of pure ZnO, Zn0.95V0.05O and Zn0.90V0.10O thin films. X-ray diffraction (XRD) analysis of the films before and
after ion irradiation confirms that all the films are in (002) preferred orientation. Upon ion irradiation, the increase of
full width at half maximum (FWHM) and decrease of XRD intensity of (002) diffraction peak are observed.
Photoluminescence (PL) spectra of ion irradiated films exhibit strong defect related emission about ~2.45 eV. It might be
attributed to the defects such as oxygen vacancies in the film. The formation of oxygen vacancies upon ion irradiation
resulting increase in band gap of pure ZnO, Zn0.95V0.05O and Zn0.90V0.10O thin films. The ion irradiated Zn0.95V0.05O and Zn0.90V0.10O films exhibit strong room temperature ferromagnetism as evidenced from VSM measurements. It is
conclude that the spin associated with V ions together with increasing concentration of oxygen vacancies favours
enhanced ferromagnetic behaviour in irradiated V doped ZnO films.
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