Mr. Kai Yang Profile

Kai Yang

at Shenzhen Univ

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Proceedings Article | 19 October 2016 Paper

Matching characteristics of different buffer layers with VO2 thin films

Kai Yang, Dongping Zhang, Yi Liu, Tianrui Guan, Xiaonan Qin, Aihua Zhong, Xingmin Cai, Ping Fan, Weizhong Lv

Proceedings Volume 10154, 101540K (2016) https://doi.org/10.1117/12.2246023

KEYWORDS: Thin films, Vanadium, Sputter deposition

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VO₂ thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF₂, Al₂O₃ and TiO₂, respectively. The crystallinity and orientation relationship, thickness of VO₂thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO₂ (011). The crystallinity of VO₂ films grown on TiO₂ buffer layers are superior to VO₂ directly deposited on soda-lime glass. The Raman bands of the VO₂ films correspond to an Ag symmetry mode of VO₂ (M). The sample prepared on 100nm TiO₂ buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF₂ buffer layer has clear interface with VO₂ layer. But there are serious interdiffusion phenomenons between Al₂O₃, TiO₂ buffer layer with VO₂ layer.

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