A high-energy 588 nm yellow laser based on external-cavity frequency doubling of Raman amplifier was demonstrated. First, a 40 mJ pure high-performance 1177 nm first-order Stokes seed light was achieved with a KGd(WO4)2 (KGW) Raman oscillator pumped by 1064 nm pulse laser. Then, a single-pass KGW Raman amplifier scheme was employed to obtain 152 mJ 1177nm Raman output. Finally, by external-cavity frequency doubling with an LBO crystal, a 74.1 mJ Raman yellow laser at 588nm with a pulse duration of 10.4 ns was obtained under the total 1064 nm pumping energy of 650 mJ. The corresponding optical to optical conversion efficiency was 11.4%.
Unlike conventional topological edge states confined at a domain wall between two topologically distinct media, the recently proposed large-area topological waveguide states in three-layer heterostructures, which consist of a domain featuring Dirac points sandwiched between two domains of different topologies, have introduced the mode width degree of freedom for more flexible manipulation of electromagnetic waves. Until now, the experimental realizations of photonic large-area topological waveguide states have been exclusively based on quantum Hall and quantum valley-Hall systems. We propose a new way to create large-area topological waveguide states based on the photonic quantum spin-Hall system and observe their unique feature of pseudo-spin-momentum-locking unidirectional propagation for the first time in experiments. Moreover, due to the new effect provided by the mode width degree of freedom, the propagation of these large-area quantum spin-Hall waveguide states exhibits unusually strong robustness against defects, e.g., large voids with size reaching several unit cells, which has not been reported previously. Finally, practical applications, such as topological channel intersection and topological energy concentrator, are further demonstrated based on these novel states. Our work not only completes the last member of such states in the photonic quantum Hall, quantum valley-Hall, and quantum spin-Hall family, but also provides further opportunities for high-capacity energy transport with tunable mode width and exceptional robustness in integrated photonic devices and on-chip communications.
A high-power and widely tunable Ti: sapphire laser dual-end pumped by a 10 kHz 532 nm pulsed laser with an output wavelength of 720–890 nm was demonstrated. An effective thermal management was achieved by a dual-end pumping scheme and an elaborate symmetrical flat cavity design, which greatly improved the upper limit of pump power. When the pump power was 41.5 W, a maximum output power of 10.36 W at 800 nm was obtained with a linewidth of 2 nm and a pulse duration of 17 ns. The corresponding conversion efficiency was 25 %.
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