Matteo Alasio, Marco Vallone, Paolo Molino, Luca Errico, Stefan Hanna, Heinrich Figgemeier, Alberto Tibaldi, Francesco Bertazzi, Giovanni Ghione, Michele Goano
We present a numerical simulation study at 200K of pBn and nBn Hg1−xCdxTe barrier detectors, focused on the effects of the composition profile on the J-V characteristics in dark. Considering a conventional barrier detector structure with three regions (absorber, barrier, cap), we discuss how the J-V characteristics are affected by the steepness of the cap/barrier and barrier/absorber interfaces, especially in the nBn configuration.
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