The porous silicon is a material made by monocrystalline silicon wafers which has a structure and properties that depends on the wafers characteristics and its obtaining process. The material has a use potential in different fields of knowledge and technological application such as solar cells, humidity or gases sensors. The photoluminescence, obtained by the incidence of ultraviolet radiation over the material, has been the most studied property, noting especially the understanding of chemical and physical phenomena present in this material that can even explain its formation process. This study aimed to build a spectrum measuring system of porous silicon photoluminescence to determine the profile of the porous silicon photoemission curve for comparison between the morphology of the porous silicon and its photoluminescence.
To measure the angular response of radiometers developed in the laboratory, an automated system was assembled and characterized. The main light source is a QTH lamp of 1000W and for UV radiometers a Hg(Xe) lamp of 500W. The light beam has a useful diameter of 40 mm, a half divergence of 10mrad and the spatial uniformity is better than 97%. Errors up to 5% at large angles were estimated for misalignments of 1° in the positioning of the radiometers . In this work details of the system and results of measurements obtained with radiometers developed in the laboratory and with commercial ones are presented.
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