The application of contactless transient photoconductivity measurements in the microwave frequency range for the optoelectronic characterization of Silicon-nitride covered Silicon samples for solar cells is investigated. It is shown that these measurements are a very sensitive tool for the study of the anti-reflection properties of Silicon-nitride films. The investigation of Silicon heterojunction solar cells shows that the illumination of the Silicon-nitride covered rear face of these heterojunctions may be a method to improve the efficiency of these solar cells.
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