With this work we seek to cover a key space in the study of new materials for IR plasmonics: their integration on functional substrates. We show that Cd(Zn)O, a promising semiconductor oxide characterized by its low losses, can be grown in a polycrystalline form on a GaAs substrate. Despite this polycrystallinity, its plasmonic response can be described based on the physics of a homogeneous thin layer. With this study, we validate Cd(Zn)O for future integrated plasmonic systems on GaAsbased photonic devices.
We show here that Cd(Zn)O can be deposited on GaAs by MOCVD forming nanoparticles with a hemispherical shape. These nanoparticles maintain the key characteristics from a CdO film: very high plasma frequency and very low losses, hence retaining the strong plasmonic character. As a result of this, when illuminated with infrared light, two localized surface plasmon (LSP) modes are excited at 2.7 and 5.3 microns, and the electric field is heavily amplified in the underlying GaAs substrate. Moreover, their hemispherical geometry allows them to partially change the orientation of the field, creating a component perpendicular to the surface. We prove the coupling between the CdO LSPs and the intersubband transitions from a multiple QW structure, where the absorption is largely enhanced for p-polarized electric fields, and it is observed even under normal incidence conditions.
The use of van der Waals substrates, in which the epitaxial growth is achieved through weak dipolar interactions, can result in a significant relaxation of the epilayer strain, facilitating at the same time layer detachment.
Here, we study the case of GaN layers grown on graphene and muscovite mica. Morphology, surface potential and strain relaxation of GaN are addressed. In the case of graphene, we show it experiences interesting transformations during the growth of GaN, resulting in the intercalation of metal atoms below the graphene layer. In the case of mica, we find that part of the strain accumulated in the GaN layer relaxes by the formation of three-dimensional structures in the shape of telephone cord buckles, straight blisters or by more complex arrangements. Their characteristics are studied in relation to the initial compressive strain and the elastic parameters of the materials.
In this work we propose the use of self-assembled CdZnO nanoparticles as a route to improve power absorption in midinfrared GaAs-based quantum well infrared photodetectors (QWIPs). We experimentally demonstrate low temperature growth of CdZnO nanoparticles on GaAs and characterize their plasmonic response in the mid-IR. Computational analysis of the plasmonic resonances coupled to intersubband transitions in GaAs quantum wells show that intersubband absorption at normal incidence, forbidden by quantum selection rules, can be obtained. Gains in the quantum well power absorption as high as 5.5 are also reported.
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