The connection between device function and fundamental physical processes is a long-standing challenge. In the case of resistive and ferroelectric switching at the heart of emerging computing devices, the challenge is further exacerbated by non-equilibrium nature of the underlying dynamics. Scanning probe microscopy is a very promising technique, that can bridge the nanoscale gap between idealized atomic models and the functional scale of information devices. I will present our on-going work on methods of statistical analysis for multimodal switching microscopy, that enable robust inference of polarization dynamics in multiwell ferroelectrics enabling memcapacitive behavior and direct measurement of ionic processes underpinning resistive switching in amorphous oxides.
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