CdTe and CZT materials are technologies for gamma and x-ray imaging for applications in industry, homeland security,
defense, space, medical, and astrophysics. There remain challenges in uniformity over large detector areas (50~75 mm)
due to a combination of material purity, handling, growth process, grown in defects, doping/compensation, and metal
contacts/surface states. The influence of these various factors has yet to be explored at the large substrate level required
for devices with higher resolution both spatially and spectroscopically. In this study, we looked at how the crystal
growth processes affect the size and density distributions of microscopic Te inclusion defects. We were able to grow
single crystals as large as 75 mm in diameter and spatially characterize three-dimensional defects and map the
uniformity using IR microscopy. We report on the pattern of observed defects within wafers and its relation to
instabilities at the crystal growth interface.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.