Two-dimensional photo detector arrays with a cutoff wavelength of 2.5 μm were fabricated on InP/InGaAs
epitaxial wafers with graded buffer layers in a 320x256 geometry on a 12.5μm pitch. Novel growth and fabrication
techniques were employed to fabricate these arrays and optimize the performance. The dark current of the detector was
investigated for a wide range of temperatures. The fabricated detector array was mated with a ROIC and packaged with a
multi-stage TEC and investigated further at the FPA level. The effect of the graded buffer layers on the sensor
performance was investigated and the results were compared to other methods used to develop and fabricate 2D image
sensors on extended wavelength materials.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.