μThis paper reports a novel design of SiO2 microcantilever for high sensitivity sensor platform.
In order to fabricate this device, a new fabrication process using isotropic combined with
anisotropic dry etching to release the SiO2 microcantilever beam by ICP (Inductively Coupled
Plasma) was developed and investigated. This new process not only obtains a high etch rate at
9.1 &mgr;m per minute, but also provides a good profile controllability, and a flexibility of device
design. To compare the SiO2 and Si cantilever beam, the results of simulation and theoretical
analysis are given. The results predict the SiO2 cantilever can achieve a higher sensitivity than
the Si cantilever. The SiO2 cantilever beams with 1 &mgr;m thickness, 100 &mgr;m width, and 250 &mgr;m
length were fabricated and tested by exposing it to aminoethanethiol solution of low
concentration. The experimental data support the prediction derived from the simulation
results. The moisture sensor based on the surface modified cantilever beam showed a good
response to one percentage relative humidity.
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