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Qi He

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Proceedings Article | 17 April 2020 Paper

Hydrogen terminated diamond diode with high breakdown voltage

Jinfeng Zhang, Jun Liu, Qi He, Zeyang Ren, Kai Su, Jincheng Zhang, Yue Hao

Proceedings Volume 11455, 114556Y (2020) https://doi.org/10.1117/12.2565304

KEYWORDS: Diodes, Diamond, Hydrogen, Field effect transistors, Aluminum

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The hydrogen terminated diamond schottky barrier diode was fabricated on single crystal diamond substrate that grown by using microwave plasma chemical vapor deposition system. Current-voltage characteristics of the device with radius of Schottky electrode of 70μm and the Schottky-Ohmic interspace of 10 μm was measured. The device shows good rectification properties. The current density is 5A/cm² at the forward voltage of -4V, and a low reverse current is ~10-7 A/cm² is obtained. The conduction mechanism of the device was analyzed, and the barrier height of Schottky contact was calculated to be 1.01eV. The direct current characteristics of the devices with different Schottky-Ohmic interspaces or Schottky areas are compared. In addition a high reverse breakdown voltage of 1200V has been achieved on the device with the interspace of 10μm, which suggests that the electric field reaches 1.2 MV/cm. This device has potential to be used in the fields of high power and high voltage application.

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