The semi-insulating (SI) GaAs photoconductive switch is considered to be the higher efficient THz source recently. In
order to make good use of the photoconductive switch to generate the more efficient THz wave, SI-GaAs
photoconductive switch's working mechanism is discussed from the respect of EL2 deep level in this paper. It has three
operation modes. The SI-GaAs material has many kinds of intrinsic-defects. One of the more notable defects is EL2 deep
level. The EL2 level can become an impactful electron trap in the linear operation mode; The EL2 level is also the
necessary condition of nonlinear (also known as Lock-on) operation mode emerging in III-V semiconductors such as
GaAs and InP. At the same time, the compound operation mode is substantial related with the conversion from neutral
energy level EL20 to metastable energy level EL2* and singly ionized energy level EL2+ in semiconductor under the light.
So in this paper the effects of EL2 deep level are analyzed in photoconductive switch' there operation modes.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.