Organic Field Effect Transistors (OFETs), while showing a lot of promise, currently suffer from a number of limitations. Organic doping can help to overcome these limitations. It opens up a number of new possibilities by offering a way to define majority charge carriers, control the charge carrier density, threshold voltage etc. precisely and produce devices with better performance, stability, and reproducibility. The doping techniques explored in OFETs thus far have been in the range of a few wt.%, which has limited the use of doping to contact doping or a thin doped layer at the gate dielectric interface. Furthermore, the high doping concentrations used place serious limitations on the doping efficiency that can be achieved. Here we demonstrate the successful use of low doping in the 100ppm range throughout the bulk of the organic semiconductor layer of an OFET with the use of a rotating shutter.
Organic p-i-n diodes enable the development of highly efficient organic devices such as organic light-emitting diodes. Understanding charge carrier trapping in these diodes is essential to comprehensively describe their electrical behaviors and increase their efficiency further. Here, a new bias stress protocol is developed to study charge trapping and the influence of trapping on molecular doping in organic p-i-n diodes. The results are discussed with the help of a novel analytical model, which is capable of quantifying the density of trapped charges and the doping efficiency from capacitance spectroscopy. We propose that this combined experimental/modeling approach is versatile and can lead to an advanced understanding of trapping in organic electronic devices.
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