A smile-suppressed high-power InGaN laser array has been developed for a high beam quality material processing light source. The smile effect becomes apparent especially in InGaN laser array with large chip curvature due to lattice mismatch of epitaxial growth layers. To reduce the smile, periodic grooves are introduced to the epitaxial layers for removing the origin of strain. It also enables a two-dimensional strain management of remaining epitaxial layers. This technology improves the chip curvature within micron range, i.e. as small as 0.3 μm in a 9 mm-width InGaN laser array. We have successfully realized reducing the smile to 0.4 μm without degrading the laser light output characteristics.
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