Prof. Thomas F. Boggess Profile

Prof. Thomas F. Boggess

at Univ of Iowa

SPIE Involvement:

Author

Publications (16)

Proceedings Article | 16 February 2017 Paper

Paper

Cascading, efficiency, and broadband emission in mid-infrared Superlattice Light Emitting Diodes (SLEDs)

J. Prineas, R. Ricker, A. Muhowski, C. Bogh, S. Provence, T. Boggess

Proceedings Volume 10124, 101240K (2017) https://doi.org/10.1117/12.2250431

KEYWORDS: Superlattices, Light emitting diodes, External quantum efficiency, Mid-IR, Quantum efficiency, Infrared radiation, Projection systems, Modulation, Black bodies, Internal quantum efficiency, Gallium antimonide, Gallium arsenide, Spectroscopy

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Proceedings Article | 16 February 2017 Paper

Paper

512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes

Russell Ricker, Sydney Provence, Lee Murray, Dennis Norton, Jonathon Olesberg, John Prineas, Thomas Boggess

Proceedings Volume 10124, 101241L (2017) https://doi.org/10.1117/12.2258468

KEYWORDS: Light emitting diodes, Superlattices, Mid-IR, Infrared radiation, Black bodies, Silicon, Indium, Diodes, Gallium antimonide, Molecular beam epitaxy

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Proceedings Article | 8 February 2015 Paper

Paper

Temperature dependent carrier lifetime measurements of InAs/InAsSb T2SLs

Y. Aytac, B. Olson, J. Kim, E. Shaner, S. Hawkins, J. Klem, M. Flatté, T. Boggess

Proceedings Volume 9370, 93700J (2015) https://doi.org/10.1117/12.2077753

KEYWORDS: Antimony, Temperature metrology, Data modeling, Stereolithography, Mid-IR, Superlattices, Doping, Tellurium, Absorption, Infrared detectors

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Proceedings Article | 15 October 2012 Paper

Paper

Annealing effect on the long wavelength infrared InAs/GaSb superlattice materials

H. Haugan, G. Brown, S. Elhamri, B. Olson, T. Boggess, L. Grazulis, S. Pacley

Proceedings Volume 8512, 85120K (2012) https://doi.org/10.1117/12.928713

KEYWORDS: Stereolithography, Annealing, Long wavelength infrared, Gallium antimonide, Temperature metrology, Semiconducting wafers, Superlattices, Laser sintering, Atomic force microscopy, Sensors

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Proceedings Article | 17 September 2011 Paper

Paper

The role of InAs thickness on the material properties of InAs/GaSb superlattices

H. Haugan, G. Brown, F. Szmulowicz, S. Elhamri, B. V. Olson, T. Boggess, L. Grazulis

Proceedings Volume 8154, 81540J (2011) https://doi.org/10.1117/12.892751

KEYWORDS: Stereolithography, Indium arsenide, Long wavelength infrared, Gallium antimonide, Mid-IR, Absorption, Superlattices, Interfaces, Electrons, Infrared radiation

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Proceedings Article | 16 April 2008 Paper

Paper

Performance of 64x64 MWIR super lattice light-emitting diode (SLED) array for IR scene generation

Naresh Das, Fouad Kiamilev, J. Prineas, J. Olesberg, E. Koerperick, L. Murray, T. Boggess

Proceedings Volume 6942, 69420I (2008) https://doi.org/10.1117/12.782652

KEYWORDS: Light emitting diodes, Mid-IR, Superlattices, Gallium antimonide, Cameras, Black bodies, Capacitors, Metals, Body temperature, Switches

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Proceedings Article | 23 February 2006 Paper

Paper

PIN versus PN homojunctions in GaInAsSb 2.0-2.5 micron mesa photodiodes

J. Prineas, J. Yager, J. Olesberg, S. Seydmohamadi, C. Cao, M. Reddy, C. Coretsopoulos, J. Hicks, T. Boggess, M. Santilli, L. Olafsen

Proceedings Volume 6119, 611903 (2006) https://doi.org/10.1117/12.647109

KEYWORDS: Doping, Gallium antimonide, Gallium indium arsenide antimonide phosphide, Sensors, Antimony, Diodes, Electrons, Gallium, Photodiodes, Diffusion

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Proceedings Article | 7 April 2005 Paper

Paper

Quaternary GaInAsSb 2.0-2.5 micron back-illuminated focal plane array for blood glucose monitoring

John Prineas, Madhusudhana Reddy, Jonathon Olesberg, Chuanshun Cao, Saravanan Veerasamy, Michael Flatte, Edwin Koerperick, Thomas Boggess, Michael Santilli, Linda Olafsen

Proceedings Volume 5726, (2005) https://doi.org/10.1117/12.590820

KEYWORDS: Sensors, Gallium indium arsenide antimonide phosphide, Staring arrays, Gallium antimonide, Metals, Glucose, Absorption, Blood, Antimony, Etching

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Proceedings Article | 14 June 2004 Paper

Paper

Carrier and spin dynamics in charged quantum dots

Kimberley Hall, Kenan Gundogdu, Thomas Boggess, Oleg Shchekin, Dennis Deppe

Proceedings Volume 5361, (2004) https://doi.org/10.1117/12.531620

KEYWORDS: Luminescence, Quantum dots, Picosecond phenomena, Gallium arsenide, Spin dynamics, Modulation, Semiconductors, Polarization, Spin polarization, Light emitting diodes

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Proceedings Article | 1 April 1999 Paper

Paper

Comparison of mid-infrared laser diode active regions

Jonathon Olesberg, Michael Flatte, Bennett Brown, Tom Hasenberg, Scott Anson, Thomas Boggess, Christoph Grein

Proceedings Volume 3628, (1999) https://doi.org/10.1117/12.344541

KEYWORDS: Quantum wells, Indium arsenide, Superlattices, Semiconductor lasers, Absorption, Mid-IR, Waveguides, Active optics, Quantum efficiency, Laser development

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SPIE Journal Paper | 1 May 1993

Picosecond investigations of optical limiting mechanisms in King's complex

Thomas Boggess, Graham Allan, Steven Rychnovsky, Danielle Labergerie, Clark Venzke, Arthur Smirl, Lee Tutt, Alan Kost, Stephen McCahon, Marvin Klein

OE, Vol. 32, Issue 05, (May 1993) https://doi.org/10.1117/12.10.1117/12.133318

KEYWORDS: Picosecond phenomena, Absorption, Optical limiting, Scattering, Data modeling, Solids, Molecules, Laser scattering, Polymethylmethacrylate, Saturable absorption

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Proceedings Article | 18 August 1992 Paper

Paper

Optical nonlinearities and optical limiting in GaP at 532 nm

Steven Rychnovsky, Graham Allan, Clark Venzke, Arthur Smirl, Thomas Boggess

Proceedings Volume 1692, (1992) https://doi.org/10.1117/12.138062

KEYWORDS: Optical limiting, Absorption, Nonlinear optics, Semiconductors, Eye, Visible radiation, Picosecond phenomena, Optical testing, Refractive index, Silicon

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Proceedings Article | 18 August 1992 Paper

Paper

Picosecond measurements of optical nonlinearities in King's complex and synthesized analogues

Graham Allan, Steven Rychnovsky, Arthur Smirl, Thomas Boggess, Lee Tutt, Alan Kost, Marvin Klein

Proceedings Volume 1692, (1992) https://doi.org/10.1117/12.138059

KEYWORDS: Picosecond phenomena, Absorption, Molecules, Transition metals, Metals, Scattering, Solids, Optical limiting, Optical testing, Nonlinear optics

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SPIE Journal Paper | 1 May 1991

Single-beam and multiple-beam optical limiters using semiconductors

Thomas Boggess, Arthur Smirl, Jimmy Dubard, A. Cui, Rod Skinner

OE, Vol. 30, Issue 05, (May 1991) https://doi.org/10.1117/12.10.1117/12.55847

KEYWORDS: Absorption, Gallium arsenide, Silicon, Nonlinear optics, Semiconductors, Energy transfer, Beam controllers, Transient nonlinear optics, Picosecond phenomena, Singular optics

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Proceedings Article | 1 October 1990 Paper

Paper

Comparison between single-beam and multiple-beam optical limiters in semiconductors

Jimmy Dubard, Arthur Smirl, Thomas Boggess, A. Cui, Steven Skinner

Proceedings Volume 1307, (1990) https://doi.org/10.1117/12.21674

KEYWORDS: Absorption, Gallium arsenide, Silicon, Transient nonlinear optics, Sensors, Energy transfer, Beam controllers, Electro optical sensors, Nonlinear optics, Semiconductors

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Proceedings Article | 1 October 1990 Paper

Paper

Single- and multiple-beam nonlinear absorption and refraction measurements in semiconductors

Arthur Smirl, Thomas Boggess, Jimmy Dubard, A. Cui

Proceedings Volume 1307, (1990) https://doi.org/10.1117/12.21675

KEYWORDS: Absorption, Gallium arsenide, Sensors, Electro optical sensors, Semiconductors, Refraction, Picosecond phenomena, Electro optics, Switches, Optical coatings

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Showing 5 of 16 publications

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