Dr. Timo Seppänen Profile

Dr. Timo Seppänen

Development Engineer at Sensonor Technologies AS

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Proceedings Article | 3 March 2006 Paper

Structural and optical characterization of wurtzite Al_0.8In_0.2N thin films grown by low temperature magnetron sputter epitaxy

T. Seppänen, L. Hultman, J. Birch

Proceedings Volume 6121, 61210C (2006) https://doi.org/10.1117/12.647294

KEYWORDS: Aluminum, Zirconium, Epitaxy, Thin films, Crystals, Gallium nitride, Luminescence, Ions, Interfaces, Aluminum nitride

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Single-crystal ternary wurtzite Al_0.8In_0.2N thin films were grown epitaxially onto lattice-matched (111)-oriented Ti_0.2Zr_0.8N seedlayers. The epilayers were grown onto single-crystal MgO (111) substrates by magnetron sputter epitaxy (MSE) using reactive direct current magnetron sputtering in an N₂ discharge under ultra-high-vacuum conditions. The growth temperatures ranged from 20 to 700 ^oC. Low-energy ion-assisted growth conditions, enhancing the epitaxy, were achieved by applying a negative substrate potential of 15-45 V. Film compositions and lattice parameters were determined using Rutherford Backscattering Spectroscopy (RBS) and High-Resolution X-ray diffraction (XRD), respectively. Cross-sectional High-Resolution Electron Microscopy of the interface regions verified the epitaxy and the crystallinity of the films. XRD ω-rocking scans of the Al_0.8In_0.2N 0002-peak showed full-width-at-half-maximum values of ~2400 arcs, indicating a high structural quality of the films. Opto-electronical properties were studied by cathodoluminescence at temperatures between 5 and 293 K. Luminescence was observed at wavelengths as short as 248 nm, corresponding to an energy of 5.0 eV. These results point towards the feasibility of metastable Al_0.8In_0.2N solid solutions as an active luminous material in opto-electronics. It also shows that MSE-grown Al_0.8In_0.2N can be an excellent choice for lattice-matched GaN heterostructures, with a resulting energy band-gap difference enabling strong charge carrier confinement. In addition to these new and original results, a brief review of the present work on Al(_1-x)In_xN growth at Linkoeping University is presented.

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