We demonstrate novel electrically driven 1330 and 1550 nm VCSELs using conventional InGaAsP active regions. The VCSELs employ two TiO2/SiO2 DBR mirrors and an InAlAs tunnel junction that converts electrons to holes, minimizing free carrier losses in the p-type material. The active layers are transferred onto Si wafers using wafer-scale Pd silicide bonding. We have obtained single-mode room-temperature output powers as high as 2.4mW at 1330nm and 2.7mW at 1550nm. At 80C we have obtained 0.6mW of single-mode power at 1330nm and over 1 mW at 1550nm. These are the highest power single-mode InP-based VCSELs reported in these wavelength ranges.
Steven Maranowski, Michael Camras, Changhua Chen, Lou Cook, M. Craford, Dennis DeFevere, Robert Fletcher, Gloria Hofler, Frederick Kish, Chihping Kuo, A. Moll, Tim Osentowski, K. Park, Michael Peanasky, S. Rudaz, Dan Steigerwald, Frank Steranka, Steve Stockman, I. Tan, J. Tarn, Jingxi Yu, Mike Ludowise, Virginia Robbins
A new class of LEDs based on the AlGaInP material system first became commercially available in the early 1990's. These devices benefit from a direct bandgap from the red to the yellow-green portion of the spectrum. The high efficiencies possible in AlGaInP across this spectrum have enabled new applications for LEDs including automotive lighting, outdoor variable message signs, outdoor large screen video displays, and traffic signal lights. A review of high-brightness AlGaInP LED technology will be presented.
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