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Dr. Weiyang Jiang
Research Associate
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Author
Publications (1)
Proceedings Article | 4 May 2010 Paper
Design and characterization of strain-compensated InGaAs/GaAsSb type-II MQW structure with operation wavelength at ~3μm
W. Jiang, Baile Chen, Jinrong Yuan, A. Holmes
Proceedings Volume 7660, 76603O (2010) https://doi.org/10.1117/12.849562
KEYWORDS: Antimony, Quantum wells, Mid-IR, Electrons, Temperature metrology, Absorption, PIN photodiodes, Photodiodes, Molecular beam epitaxy, Semiconducting wafers
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