Carbon-rich SiC thin films were synthesized by rf-reactive sputtering at different anodic voltages, 1.2 kV, 1.6 kV and 2.0 kV respectively. XPS, FTIR, Raman spectra and Nano Indentor microhardness were used to characterize as- deposited thin films. The results showed that higher anodic voltage enabled to increase Si-C bond and sp3-bonded carbon atoms in the films. The sample grown at 2.0 kV exhibited Si/C ratio of nearly 1 from XPS results, a pronounced Si-C peak in the FTIR spectra, only a weak peak at 1420 cm-1 and no other graphite peak in the Raman spectra, the microhardness of 25.2 GPa.
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