Mr. Xiaogang Chen Profile

Xiaogang Chen

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 6 November 2023 Paper

Composite of ordered mesoporous materials and quantum dots for light extraction of μLEDs

Mengyun Zhao, Xiaogang Chen, Gongming Li, Enguo Chen

Proceedings Volume 12921, 129213J (2023) https://doi.org/10.1117/12.2691583

KEYWORDS: Composites, Quantum particles, Light emitting diodes, Quantum light, Luminous efficiency, Fluorescence intensity, Quantum dots

Read Abstract +

Quantum Dots (QD) have attracted broad attention owing to their unique advantages in micro-scale light-emitting diodes (μLED). However, the color converted μLEDs prepared by pure QDs will have low stability and luminous efficiency. The combination of QD and Ordered Mesoporous Materials (OMMs) can effectively improve the luminescent performance of μLED. This paper, from the properties via simulation and experiment, studies the influence of QD/OMMs composites on the properties. The luminescence properties of QD/OMMs composites were studied by instrument characterization. The μLED model with OMMs was established based on Finite Difference Time Domain (FDTD) method, and the Light Extraction Efficiency (LEE) of μLED in the three central wavelength ranges was explored respectively. The simulation results show that the LEE of μLED doped with SBA reaches 89.5%, which is 40% higher than that doped with MCM. More importantly, the μLED doped with OMMs designed in this paper can achieve a high luminous efficiency of 79.2% in the red light range and 83.2% in the green light range. The QD/OMMs composites designed are applied to μLED, and the high LEE is realized in three same central wavelength ranges, which provides a new direction and strategy for the preparation of GaN-based μLED devices

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years