The surface contamination and the complexity of the process seriously restrict the development of InSb detector. The corrosion rates of wafers from different diffusion batches and different crystal in different batches of corrosive liquid were studied to determine a stable corrosion time by depth testing. The research shows that the high concentration on the surface can be removed once by controlling the corrosion time to realize the optimization of the corrosion process after diffusion. Through the surface analysis, the current-voltage and imaging characterization analysis, this method can effectively remove the stress on the wafer surface and the wafer damage in the process of diffusion. This optimized method can not only raise the process efficiency, but also greatly promote the surface quality of InSb. The contamination and residue on the surface will be reduced, and thus the performance of the detector will be improved.
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