A graphene photodetector based on ultra-thin silicon waveguide at 1.55μm is proposed. By reducing the silicon core thickness, the fundamental TE waveguide mode is less confined and light-graphene interaction is enhanced. Benefiting from the ultrathin silicon waveguide and reflector structure, the graphene absorption coefficient reaches 0.36 dB/μm. A 10nm-thick CVD-grown hexagonal boron nitride is covered on the graphene to improve the device performance. With the help of metal-graphene-metal structure, the contact resistance is reduced dramatically. The devices have shown a responsivity of 1.4 mA/W at 0 V bias and 23.1 mA/W at 0.3 V bias with 0.24 mW input optical power. The measured 3-dB bandwidth is 17GHz under 0V bias voltage at 1550 nm.
Silicon photonics have been developed very successfully in the past decades. In order to break the limitation of the silicon material for realizing photonic devices, more and more special optical materials are introduced to silicon photonics, and silicon-plus photonics is being developed. In this paper, we give a review on recent progresses of siliconplus photonics for light manipulation and photodetection by introducing metals, germanium, 2D materials, semiconductor nanowires, etc.
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