Electro-optical computing systems are promising for future energy-efficient computing, while scalable, dual electrical-optical functionality and low energy-consumption electrical-optical devices are not yet implemented on-chip. In this work, with a tailored design for better heat confinement, we implement scalable phase-change devices with dual electrical-optical functionality. They show ultralow programming energy for both electrical and optical switching in a pico-joule scale, which is orders lower than other integrated electro-optical phase change devices, multilevel switching until 20% contrast, good cyclability, and readout in both electrical and optical domains.
Cascaded linear and non-linear operations form the basis for all integrated photonic applications ranging from routing to computations. Because of the weak interaction between photons, achieving substantial optical nonlinearities at low power remains challenging. In this work, we demonstrate a new photonic framework where signals carried in different wavelengths can be added and encoded in a new wavelength with low optical loss. Using this approach, we can realize highly nonlinear all-optical neurons operated fully in the near-infrared domain at low power.
There is a growing interest in the use of chalcogenide phase-change materials (PCMs) for reconfigurable metasurfaces to realize next-generation compact adaptive optical systems. However, the application of the classic PCM composition such as Ge2Sb2Te5 for near infrared metasurfaces has been limited due to its high absorption in the crystalline state. Here, by using an ultralow-loss and high-index phase-change material Sb2Se3, we show reconfigurable metasurfaces can manipulate light efficiently in near infrared region with comparable efficiencies in both the amorphous and crystalline states of the material.
Recently there has been a growing interest in SiC on oxide integrated photonics platform, due to excellent linear and strong non-linear properties. Due to excellent thermal and mechanical properties, SiC devices are suitable for operations in harsh environments. In this work, we demonstrate the integration of two PCMs Ge2Sb2Te5 (GST) and Ag3In4Sb76Te17 (AIST) on a CMOS compatible amorphous SiC waveguide, grown using low-temperature CVD on oxide. We demonstrate a photonic memory, which can be programmed and accessed optically and we achieve multiple memory levels reliably on these devices. Furthermore, using time-resolved dynamic switching experiments we study the thermo-optical effects and switching speeds.
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