Mr. Long Wang Profile

Long Wang

at Science and Technology on LLL Vision Lab

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Author

Publications (10)

Proceedings Article | 13 April 2015 Paper

The influences of vacuum pressure and gas components on the stability of GaAs photocathode

Long Wang, Feng Shi, Hongchang Cheng, Sen Niu, Hongli Shi, Lei Yan, Xing Cheng, Yuan Yuan

Proceedings Volume 9522, 95220I (2015) https://doi.org/10.1117/12.2178709

KEYWORDS: Gallium arsenide, Signal attenuation, Cesium, Spectroscopy, Protactinium, Semiconductors, Quantum efficiency, Gases, Adsorption, Night vision

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Proceedings Article | 4 March 2015 Paper

Effect of annealing time on the adsorption of cesium atoms

Sen Niu, Feng Shi, Hongchang Cheng, Long Wang, Lei Yan, Hongli Shi, Yuan Yuan, Chang Chen

Proceedings Volume 9521, 95211N (2015) https://doi.org/10.1117/12.2178361

KEYWORDS: Cesium, Annealing, Chemical species, Gallium arsenide, Adsorption, Night vision, Temperature metrology, Image intensifiers, Natural surfaces, Oxygen

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Proceedings Article | 18 December 2014 Paper

Depth profile analysis of native oxide layer on GaAs (100) surface

Xing Cheng, Feng Shi, Hongchang Cheng, Sen Niu, Long Wang, Zhuang Miao, Chang Chen

Proceedings Volume 9295, 929503 (2014) https://doi.org/10.1117/12.2070798

KEYWORDS: Oxides, Gallium, Etching, Gallium arsenide, Arsenic, Ions, Chemical species, Semiconducting wafers, X-rays, Photoemission spectroscopy

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Proceedings Article | 2 September 2014 Paper

Cooperative chemisorption of K and O elements on cleaved GaAs(110) surface

Bin Ren, Zhuang Miao, Zhi-Peng Hou, Hong-Chang Cheng, Feng Shi, Gang-Cheng Jiao, Xiao-Feng Bai, Sen Niu, Long Wang, Ling-Yun Fu

Proceedings Volume 9284, 92841G (2014) https://doi.org/10.1117/12.2069815

KEYWORDS: Adsorption, Chemical species, Chemical elements, Gallium arsenide, Gallium, Chemisorption, Night vision, Visual process modeling, Optoelectronics, Oxidation

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Proceedings Article | 2 September 2014 Paper

Arsenic volatilization of GaAs photocathode at low temperature during thermal cleaning

Hui Liu, Feng Shi, Zhuang Miao, Xiang Gao, Hong-chang Cheng, Sen Niu, Long Wang, Chang Chen

Proceedings Volume 9284, 92840Z (2014) https://doi.org/10.1117/12.2069718

KEYWORDS: Gallium arsenide, Arsenic, Gallium, Wet etching, Chemical reactions, Chemical elements, Ions, Temperature metrology, Cesium, Oxides

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The gallium arsenide (GaAs) photocathode was generally cleaned by radiant heating, direct heating, ion bombardment annealing, and so on. In this paper, the radiant heating method, namely thermal cleaning method, was adopted for GaAs photocathode surface purification. Using this method could obtain an atomic clean surface, ensure the integrity of the GaAs surface lattice, and guarantee the uniformity of surface cleaning effect at the same time. But because the accurate measurement of the GaAs photocathode surface temperature in the vacuum system was very difficult, the residual gas analyzer (RGA) was used in this experiment to monitor the residual gas composition in ultrahigh vacuum during the thermal cleaning process and determine the thermal cleaning temperature by the partial pressure curves of As and Ga. It was found that the first peaks of As and Ga elements both appeared after heating about one hour, accompanied with H₂O, N₂/CO, CO₂ and other common gas. According to partial pressure curves of H₂O, N₂/CO, CO₂ and the heating time, it could be judged that the temperature at that time was not high, which should be under 150°C.After thermal cleaning experiment of three GaAs photocathodes, it was found that the peak value of As partial pressure at low temperature was generally within 10^-11mbar~10^-10mbar, and the peak value was at 10^-10mbar at high temperature. Sometimes it was appeared that the peak value of As partial pressure at low temperature was even higher than the peak value at high temperature. The As volatilization phenomenon occurred at low temperature indicated that the elemental As exist on the GaAs photocathode surface or near surface after the chemical etching process, and the As could volatilize from GaAs photocathode at low temperature in the beginning of thermal cleaning. This research has guiding significance for further understanding the thermal cleaning mechanism of GaAs photocathode and improving the thermal cleaning technology.

Proceedings Article | 2 September 2014 Paper

Characteristic of photocurrent decline of transmission-mode equally doped GaAs photocathode

Dong Lian Zhang, Feng Shi, Xiang Gao, Hong-Chang Cheng, Zhuang Miao, Sen Niu, Long Wang, Chang Chen

Proceedings Volume 9284, 928410 (2014) https://doi.org/10.1117/12.2069722

KEYWORDS: Cesium, Gallium arsenide, Oxygen, Annealing, Chemical species, Thermal modeling, Carbon dioxide, Night vision, Semiconductors, Molecules

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Proceedings Article | 2 September 2014 Paper

Analysis of electric vacuum characteristics of MCP

Xiang Gao, Feng Shi, Hong-chang Cheng, Lei Yin, Zhuang Miao, Xing Cheng, Long Wang, Sen Niu

Proceedings Volume 9284, 928411 (2014) https://doi.org/10.1117/12.2069628

KEYWORDS: Microchannel plates, Resistance, Image intensifiers, Image quality, Image transmission, Analytical research, Contrast transfer function, Electron transport, Night vision, Image analysis

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Proceedings Article | 2 September 2014 Paper

Influence of Ageing Processing on GaAs Photocathode of 3rd Generation Low-Light-Level Image Intensifier

Liu Feng, Feng Shi, Lei Yin, Zhuang Miao, Hong-chang Cheng, Long Wang, Sen Niu, Xiao-hui Zhang

Proceedings Volume 9284, 92840Y (2014) https://doi.org/10.1117/12.2069627

KEYWORDS: Gallium arsenide, Image intensifiers, Image processing, Shortwaves, Electrons, Cesium, Light emitting diodes, Sensors, Night vision, Reliability

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Proceedings Article | 16 August 2013 Paper

Study on electron scrubbing methods of Cs2Te ultraviolet double-MCP image intensifiers

Hui Liu, Liu Feng, Lian-dong Zhang, Xiang Gao, Zhuang Miao, Sen Niu, Long Wang, Xiao-hui Zhang

Proceedings Volume 8912, 89120O (2013) https://doi.org/10.1117/12.2033680

KEYWORDS: Microchannel plates, Ultraviolet radiation, Image intensifiers, Vacuum equipment, Electrodes, Image processing, Ultraviolet detectors, Signal to noise ratio, Night vision, Manufacturing

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Proceedings Article | 16 August 2013 Paper

Characterization study of native oxides on GaAs(100) surface by XPS

Liu Feng, Lian-dong Zhang, Hui Liu, Xiang Gao, Zhuang Miao, Hong-chang Cheng, Long Wang, Sen Niu

Proceedings Volume 8912, 89120N (2013) https://doi.org/10.1117/12.2033679

KEYWORDS: Oxides, Gallium, Arsenic, Gallium arsenide, Surface finishing, Wet etching, Polishing, Semiconducting wafers, Chemical analysis, Oxidation

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Showing 5 of 10 publications

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