Paper
15 October 1997 Silicon diffraction gratings for use in the far and extreme ultraviolet
Robert L. Bristol, Jerald A. Britten, Richelieu Hemphill, Patrick N. Jelinsky, Mark Hurwitz
Author Affiliations +
Abstract
We report the fabrication and evaluation of silicon diffraction gratings for use in the far- and extreme- ultraviolet. An interference technique was used to expose a layer of photoresist on a 10 cm silicon wafer in a series of parallel strips. V-shaped grooves were then etched into the wafer anisotropically. Diffraction efficiencies for a first pair of gratings at groove periods of 1.0 and 2.5 micrometers were measured. The process leaves much room for refinement, but shows promise in that the gratings produce clear diffraction orders with reasonable efficiency and have groove facets free of pitting or sharp ridges.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert L. Bristol, Jerald A. Britten, Richelieu Hemphill, Patrick N. Jelinsky, and Mark Hurwitz "Silicon diffraction gratings for use in the far and extreme ultraviolet", Proc. SPIE 3114, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy VIII, (15 October 1997); https://doi.org/10.1117/12.283792
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Cited by 5 scholarly publications.
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KEYWORDS
Semiconducting wafers

Silicon

Diffraction gratings

Etching

Oxides

Photomasks

Photoresist materials

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