Development of main chain scission type photoresists for EUV lithography

A. Shirotori; Y. Vesters; M. Hoshino; A. Rathore; D. De Simone; G. Vandenberghe; H. Matsumoto

doi:10.1117/12.2536348

26 September 2019 Development of main chain scission type photoresists for EUV lithography

A. Shirotori, Y. Vesters, M. Hoshino, A. Rathore, D. De Simone, G. Vandenberghe, H. Matsumoto

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 111470J (2019) https://doi.org/10.1117/12.2536348
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

In this work, we report the lithography performance of main chain scission type resists exposed with the ASML NXE3300B EUV scanner. We also detail the advancements achieved in recent developments of the novel process conditions and the polymer properties of main chain scission type resist. With optimized resist thickness and resist developer, a resolution of 16 nm half-pitch for dense line-space pattern can be achieved with a low roughness but with a high dose over 70 mJ/cm² is required for ZER01 series (based on Zeon’s resists for EB lithography). Therefore, Zeon developed ZER02 series (Zeon’s novel resists) for EUV lithography, with a modified polymer structure improving the EUV absorption. The lithographic capabilities of dense Line-Space (L/S) patterns and orthogonal contact hole (C/H) patterns with ZER02#1 is presented. For L/S pattern, a resolution of 16 nm half pitch was achieved at an exposure dose of 57 mJ/cm², giving an unbiased LWR of 2.7 nm and an unbiased LER of 2.0 nm. For orthogonal C/H pattern, 44 nm pitch was resolved at 50.4 mJ/cm², with a LCDU of 3.4 nm. In addition to the enhancement of the lithographic performance achieved, fundamental studies with Gel Permeation Chromatography (GPC) and Dissolution Rate Monitor (DRM) were conducted to understand the pattering mechanism of ZER02#1 under EUV exposure.

Conference Presentation

Citation Download Citation

A. Shirotori, Y. Vesters, M. Hoshino, A. Rathore, D. De Simone, G. Vandenberghe, and H. Matsumoto "Development of main chain scission type photoresists for EUV lithography", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111470J (26 September 2019); https://doi.org/10.1117/12.2536348

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available