Automated TEM metrology and EDS characterization of plan view DRAM capacitors

Karthik Gnanasekaran; Michael Strauss; Jiashi Zhou; Lin Jiang; Xiaoting Gu; Zhenxin Zhong

doi:10.1117/12.3010955

9 April 2024 Automated TEM metrology and EDS characterization of plan view DRAM capacitors

Karthik Gnanasekaran, Michael Strauss, Jiashi Zhou, Lin Jiang, Xiaoting Gu, Zhenxin Zhong

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129553B (2024) https://doi.org/10.1117/12.3010955
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

Capacitors play an essential role in dynamic random-access memory (DRAM) devices. With continuous DRAM device scaling, critical dimension measurements and elemental analysis of capacitor structures becomes more critical. Here, we present an automated TEM metrology and EDS characterization workflow for plan view DRAM capacitors. We utilized a Metrios 6 (Scanning) Transmission Electron Microscope ((S)TEM) equipped with an Ultra-X Energy Dispersive X-Ray Spectroscopy (EDS) detector to obtain high-quality analytical information of DRAM capacitors. The large solid angle of the Ultra-X detector provides approximately 3-4 times more x-ray counts than the previous generation Dual-X detector. Further, we show Ultra-X detector can characterize the elemental composition even on layers as thin as ~1 nm using low electron doses. Additionally, we demonstrate that the extended EDS acquisition induces elemental diffusion and structural alterations, leading to a ~4% reduction in the radius of certain DRAM layers. These findings underscore the importance of controlling the electron dose during imaging to ensure accurate, reliable, and reproducible CD measurements.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Karthik Gnanasekaran, Michael Strauss, Jiashi Zhou, Lin Jiang, Xiaoting Gu, and Zhenxin Zhong "Automated TEM metrology and EDS characterization of plan view DRAM capacitors", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129553B (9 April 2024); https://doi.org/10.1117/12.3010955

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