Paper
18 March 2024 High-power continuous array semiconductor laser
Weiyuan Wang, Yihang Chen, Tianfang Wang, Hongguang Yu, Jianmei Shi, Juntian Cao, Zhengqi Geng, Haoran Wen, Li Li, Heng Zhang, Yu Zhang, Yingqiang Xu, Haiqiao Ni, Chengao Yang, Zhichuan Niu, Lei Cheng
Author Affiliations +
Proceedings Volume 13104, Advanced Fiber Laser Conference (AFL2023); 131041A (2024) https://doi.org/10.1117/12.3021960
Event: Advanced Fiber Laser Conference (AFL2023), 2023, Shenzhen, China
Abstract
As one of the primary products in the field of semiconductor lasers, GaAs-based semiconductor laser devices with an 808nm wavelength are widely applied in various industries such as industrial, medical, and scientific research. These devices possess substantial market potential. This paper reports on the development of a high-power array semiconductor laser device emitting at 808nm wavelength, achieved by our research team. At a temperature of 25°C, with a filling factor of 30% and an injection current of 50A, the maximum output power reaches 55.31W, and the photoelectric conversion efficiency is 58.74%. This device demonstrates exceptional emission performance.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Weiyuan Wang, Yihang Chen, Tianfang Wang, Hongguang Yu, Jianmei Shi, Juntian Cao, Zhengqi Geng, Haoran Wen, Li Li, Heng Zhang, Yu Zhang, Yingqiang Xu, Haiqiao Ni, Chengao Yang, Zhichuan Niu, and Lei Cheng "High-power continuous array semiconductor laser", Proc. SPIE 13104, Advanced Fiber Laser Conference (AFL2023), 131041A (18 March 2024); https://doi.org/10.1117/12.3021960
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KEYWORDS
Semiconductor lasers

High power lasers

Semiconducting wafers

Waveguides

Fabrication

Reliability

Quantum processes

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