Paper
5 July 2024 A novel hybrid-embedded L-bridge EBG structure with slits for the suppression of SSN
Mengfan Jiang, Yinshui Xia, Shoudong Shi
Author Affiliations +
Proceedings Volume 13183, International Conference on Optoelectronic Information and Functional Materials (OIFM 2024); 1318329 (2024) https://doi.org/10.1117/12.3033858
Event: The 3rd International Conference on Optoelectronic Information and Functional Materials (OIFM 2024), 2024, Wuhan, China
Abstract
In this paper, a new uniplanar-compact electromagnetic bandgap structure is presented, which can significantly restrain synchronous switching noise (SSN) in high-speed circuits across a broad frequency spectrum. This innovative EBG design builds upon the foundation of the L-bridge EBG with slits, incorporating the C-type EBG structure for enhanced performance. Simulation results demonstrate that our proposed EBG structure achieves ultrawideband SSN suppression, ranging from 0.45GHz to 25GHz at -30dB. This represents a significant improvement compared to traditional L-bridge EBG with slits and C-bridge structures. Furthermore, we delve into the underlying reasons for the new structure's ultrawideband SSN suppression capabilities through analysis based on its equivalent circuit model. Additionally, electromagnetic (EM) simulation and power delivery network (PDN) analysis simulation are conducted for the proposed structure, and the results are comprehensively plotted for further examination
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Mengfan Jiang, Yinshui Xia, and Shoudong Shi "A novel hybrid-embedded L-bridge EBG structure with slits for the suppression of SSN", Proc. SPIE 13183, International Conference on Optoelectronic Information and Functional Materials (OIFM 2024), 1318329 (5 July 2024); https://doi.org/10.1117/12.3033858
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KEYWORDS
Circuit switching

Inductance

Bridges

Electromagnetism

Capacitance

Design

Device simulation

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