Electronic and optical properties of silicide/silicon IR detectors

Wolfgang A. Cabanski; Max J. Schulz

doi:10.1117/12.46510

1 August 1991 Electronic and optical properties of silicide/silicon IR detectors

Wolfgang A. Cabanski, Max J. Schulz

Proceedings Volume 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches; (1991) https://doi.org/10.1117/12.46510
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

Responsivity measurements of silicide/silicon IR detectors, i.e., PtSi/Si and IrSi/Si, are interpreted by physical models for photoemission. The quantum yield for photoemission is composed of the optical absorption and the electrical emission yield across the Schottky barrier. For thin (2-6 nm) silicide films, the IR responsivity is enhanced by diffuse wall scattering of charge carriers at the interfaces. The enhancement is high near the long wavelength cut-off of the detector and decreases to shorter wavelengths due to inelastic scattering of mobile carriers for increasing photoexcitation energy. The electronic properties of the PtSi/Si interface are also characterized by scanning tunneling micrographs and tunneling spectroscopy. The results indicate a smooth and continuous film with a disordered interface which is created by interdiffusion of the components at elevated temperatures for silicide formation. Interdiffusion increases the emission barrier and reduces the responsivity.

Citation Download Citation

Wolfgang A. Cabanski and Max J. Schulz "Electronic and optical properties of silicide/silicon IR detectors", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); https://doi.org/10.1117/12.46510

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