Paper
22 June 1999 New IRFPA device model
Glenn T. Hess, Davy Dai, Thomas J. Sanders, Gwendolyn W. Newsome, Theodore Fischer
Author Affiliations +
Abstract
Existing infrared IRFPA models lack simplicity for setting up the detector's architecture/structure and lack continuity between IR detector material, IR detector processes, detector architecture, and detector operation. Existing models also lack the ability to reveal spatially and quantitatively the full impact of the detector's material, process and architecture on IRFPA performance. This paper discusses the development of a new IRFPA computer model used to simulate existing and future IRFPA's. This model is the first model that evaluates the IR sensor system at the device physics level and provides enhanced quantitative and visual information allowing the device engineer to determine the impact of material quality, processing procedures and IR detector architecture on IRFPA performance in the SWIR-VLWIR region. This new model is combined with powerful statistical techniques that predict IRFPA performance as well as cost. Operation under virtually unlimited user specified conditions allows the engineer to project the performance of a newly designed IRFPA prior to fabrication. The complete model provides outputs at both the device physics and detector level. When interfaced with NVESD's FLIR92 and ACQUIRE, the model provides the ability to analyze effects at the device level of the detector that impact outputs at the system level such as NETD and range.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Glenn T. Hess, Davy Dai, Thomas J. Sanders, Gwendolyn W. Newsome, and Theodore Fischer "New IRFPA device model", Proc. SPIE 3696, Enabling Technology for Simulation Science III, (22 June 1999); https://doi.org/10.1117/12.351192
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KEYWORDS
Instrument modeling

Sensors

Heterojunctions

Visual process modeling

Infrared sensors

Performance modeling

Data modeling

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