Optical lithography solutions for sub-65-nm semiconductor devices

Jan Mulkens; James A. McClay; Bruce A. Tirri; Martin Brunotte; Birgit Mecking; Hans Jasper

doi:10.1117/12.485382

26 June 2003 Optical lithography solutions for sub-65-nm semiconductor devices

Jan Mulkens, James A. McClay, Bruce A. Tirri, Martin Brunotte, Birgit Mecking, Hans Jasper

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Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485382
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

In this paper we present a status update of the exposure tool developments for sub 65 nm CD’s. Main development path is 157-nm lithography. ASML follows a two step approach volume will be presented. Step 1 is based on the Micrascan step and scans platform and step 2 is based on the TWINSCAN platform. The progress of the development and first results on prototypes are discussed. This includes optics, purging, and pellicle status. The impact of CaF₂ birefringence (intrinsic and stress induced) on lens performance is evaluated. Experimental data on optical path purging is presented. The pellicle status is reviewed, and results of hard pellicle testing in KrF scanners are presented. For the Micrascan system, first imaging and overlay results are presented.

Citation Download Citation

Jan Mulkens, James A. McClay, Bruce A. Tirri, Martin Brunotte, Birgit Mecking, and Hans Jasper "Optical lithography solutions for sub-65-nm semiconductor devices", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485382

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