Mr. Hans C. Jasper Profile

Hans C. Jasper

at ASML Netherlands BV

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Author

Publications (11)

Proceedings Article | 16 October 2017 Presentation + Paper

EUV lithography industrialization progress

Roderik van Es, Mark van de Kerkhof, Hans Jasper, Leon Levasier, Rudy Peeters

Proceedings Volume 10450, 1045003 (2017) https://doi.org/10.1117/12.2281184

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Proceedings Article | 16 October 2017 Presentation

Performance and characteristics of the NXE:3400 optical system enabling sub-10nm node lithography (Conference Presentation)

Michael Busshardt, Olaf Conradi, Benjamin Kaminski, Peter Kürz, Jörg Tschischgale, Albert Voit, Markus Hauf, Jörg Zimmermann, Erik Loopstra, Tilmann Heil, Mark van de Kerkhof, Jelmer Kamminga, Roel Merry, Hans Jasper

Proceedings Volume 10450, 104500D (2017) https://doi.org/10.1117/12.2280545

KEYWORDS: Scanners, Imaging systems, Projection systems, Image resolution, Lithography, Extreme ultraviolet, Optical lithography, Lithographic illumination, Extreme ultraviolet lithography, Optical design

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The optical train is a key sub-system of each lithography scanner. The single patterning resolution limit of a scanner is determined by the characteristics and performance of its imaging system consisting of illumination and projection optics. The most relevant performance parameters of the illumination system are the maximum achievable setting flexibility, off-axis imaging capability (sigma) and pupil fill ratio (PFR). The projection optics key drivers numerical aperture (NA), aberration level, and stray light determine resolution limit and image quality of the scanner. In EUV lithography, optimizing aerial image contrast and image overlay is of particular importance to achieve the required resolution and edge placement performance of the scanner because stochastic effects degrading the initial image as e.g. resist blur and photon shot noise are still comparably strong. In this paper, we present an overview on the new features of the NXE:3400 EUV optical system designed to improve resolution limit, contrast and overlay performance of the NXE:3400 scanner. The illumination system features a novel design based on a large number of switchable facetted mirrors which enables an unprecedented setting flexibility and reduced pupil fill ratio. Furthermore, the off-axis imaging capability of the illuminator has been extended to the full NA which in combination with the reduced PFR improves the single patterning resolution limit of the NXE:3400 by approximately 20% down to 13nm. In addition, by exploiting the increased flexibility of the 3400 illumination system, we demonstrate the ability to further correct for 3D mask effects, and excellent matching to the NXE:3350 system. The projection optics features a NA of 0.33 with significantly reduced aberration level as compared to the precedent 3350 projection optics. In particular, the non-correctable errors impacting scanner overlay, and the wavefront RMS impacting image contrast have been substantially reduced. Keeping the design concept, the improvements have been implemented such that a seamless matching to the 3350 projection optics is guaranteed. Finally, we present NXE:3400 printing results to verify the imaging performance of the NXE:3400 optical system in resist. NXE:3400B wafer prints demonstrate excellent and consistent imaging performance across several systems in line with the discussed improvements of the optical train.

Proceedings Article | 24 March 2017 Paper

Enabling sub-10nm node lithography: presenting the NXE:3400B EUV scanner

Mark van de Kerkhof, Hans Jasper, Leon Levasier, Rudy Peeters, Roderik van Es, Jan-Willem Bosker, Alexander Zdravkov, Egbert Lenderink, Fabrizio Evangelista, Par Broman, Bartosz Bilski, Thorsten Last

Proceedings Volume 10143, 101430D (2017) https://doi.org/10.1117/12.2258025

KEYWORDS: Lithography, Scanners, Extreme ultraviolet lithography, Pellicles, Extreme ultraviolet, High volume manufacturing, Fiber optic illuminators, Reticles, Particles, Projection systems

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Proceedings Article | 4 March 2010 Paper

Advanced imaging with 1.35 NA immersion systems for volume production

Igor Bouchoms, Jan Mulkens, Sander de Putter, Pieter Gunter, Roelof de Graaf, Marcel Beems, Erwin Verdurmen, Hans Jasper, Nils Dieckmann, Frank Bornebroek

Proceedings Volume 7640, 76401R (2010) https://doi.org/10.1117/12.845597

KEYWORDS: Semiconducting wafers, Reticles, Scanners, Control systems, Imaging systems, Critical dimension metrology, Logic, Overlay metrology, Wavefronts, Optical alignment

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Proceedings Article | 19 March 2007 Paper

Defects, overlay, and focus performance improvements with five generations of immersion exposure systems

Jan Mulkens, Bob Streefkerk, Hans Jasper, Jos de Klerk, Fred de Jong, Leon Levasier, Martijn Leenders

Proceedings Volume 6520, 652005 (2007) https://doi.org/10.1117/12.713577

KEYWORDS: Semiconducting wafers, Particles, Signal attenuation, Scanners, Bridges, Thin film coatings, Molecular bridges, Photoresist processing, Control systems, Curtains

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Proceedings Article | 15 March 2006 Paper

Immersion lithography with an ultrahigh-NA in-line catadioptric lens and a high-transmission flexible polarization illumination system

Hans Jasper, Theo Modderman, Mark van de Kerkhof, Christian Wagner, Jan Mulkens, Wim de Boeij, Eelco van Setten, Bernhard Kneer

Proceedings Volume 6154, 61541W (2006) https://doi.org/10.1117/12.657558

KEYWORDS: Polarization, Combined lens-mirror systems, Semiconducting wafers, Curtains, Lens design, Lithographic illumination, Fiber optic illuminators, Lithography, Mirrors, Imaging systems

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Proceedings Article | 28 May 2004 Paper

Optical lithography with 157-nm technology

Theo Modderman, Hans Jasper, Herman Boom, Tammo Uitterdijk, Stephane Dana, Harry Sewell, Timothy O'Neil, Jan Mulkens, Martin Brunotte, Birgit Mecking, Toralf Gruner

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535101

KEYWORDS: Reticles, Pellicles, Lithography, Chemical elements, Oxygen, Contamination, Optical lithography, Scanners, Distortion, Surface finishing

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Proceedings Article | 26 June 2003 Paper

Optical lithography solutions for sub-65-nm semiconductor devices

Jan Mulkens, James McClay, Bruce Tirri, Martin Brunotte, Birgit Mecking, Hans Jasper

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485382

KEYWORDS: Pellicles, Birefringence, Lithography, Imaging systems, Oxygen, Critical dimension metrology, Overlay metrology, Combined lens-mirror systems, Optical lithography, Semiconducting wafers

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Proceedings Article | 14 September 2001 Paper

Performance results of a new generation of 300-mm lithography systems

Boudewijn Sluijk, Tom Castenmiller, Richard du Croo de Jongh, Hans Jasper, Theo Modderman, Leon Levasier, Erik Loopstra, Guustaaf Savenije, Marc Boonman, Harry Cox

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435752

KEYWORDS: Semiconducting wafers, Optical alignment, Lithography, Sensors, Imaging systems, Metrology, Reticles, Optical lithography, Overlay metrology, Optical scanning systems

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Proceedings Article | 7 June 1996 Paper

Step-and-scan and step-and-repeat: a technology comparison

Martin van den Brink, Hans Jasper, Steve Slonaker, Peter Wijnhoven, Frans Klaassen

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240936

KEYWORDS: Scanners, Semiconducting wafers, Distortion, Deep ultraviolet, Lamps, Critical dimension metrology, Laser scanners, 3D scanning, Mercury, Wafer-level optics

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Proceedings Article | 8 August 1993 Paper

0.35-micron lithography using off-axis illumination

Paul Luehrmann, Peter van Oorschot, Hans Jasper, Sunny Stalnaker, Steve Brainerd, J. Brett Rolfson, Linard Karklin

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150419

KEYWORDS: Optical lithography, Lithographic illumination, Lithography, Reticles, Photoresist materials, Coherence (optics), Solids, Deep ultraviolet, Image resolution, Stars

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Showing 5 of 11 publications

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